TPCP8006 2008-10-22 1 toshiba field effect transistor s ilicon n-cha nnel mos type (u-mos iv) TPCP8006 notebook pc applications portable equipment applications ? small footprint due to small and thin package ? low drain-source on-resistance: r ds (on) = 6.5 m (typ.) ? high forward transfer admittance:|y fs | = 36 s (typ.) ? low leakage current: i dss = 10 a (v ds = 20 v) ? enhancement mode: v th = 0.5 to 1.2 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v dss 20 v drain-gate voltage (r gs = 20 k ) v dgr 20 v gate-source voltage v gss 12 v dc (note 1) i d 9.1 drain current pulse (note 1) i dp 36.4 a drain power dissipation (t = 5 s) (note 2a) p d 1.68 drain power dissipation (t = 5 s) (note 2b) p d 0.84 w single pulse avalanche energy (note 3) e as 21.5 mj avalanche current i ar 9.1 a repetitive avalanche energy (note 4) e ar 0.168 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: for notes 1 to 5, refer to the next page. using continuously under heavy lo ads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute ma ximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling pr ecautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). this transistor is an electrostatic-sensitive device. handle with care. unit: mm 1,2,3 source 4 gate 5,6,7,8 drain 0.8 0.05 4 5 8 0.475 s 0.025 s m 0 . 05 a 2.4 0.1 1 m 0.05 b 0.65 a b 2.9 0.1 0.33 0.05 0.17 0.02 2.8 0.1 0.28 0.1 0.11 1.12 0.13 0.12 1.12 0.13 0.12 0.28 0.1 0.11 jedec ? jeita ? toshiba 2-3v1k weight: 0.017g(typ.) circuit configuration marking (note 5) 1 2 3 4 8 7 6 5 lot no. 1 2 3 4 8 7 6 5 8006 *
TPCP8006 2008-10-22 2 thermal characteristics characteristic symbol max unit thermal resistance, channel to ambient (t = 5 s) (note 2a) r th (ch-a) 74.4 c/w thermal resistance, channel to ambient (t = 5 s) (note 2b) r th (ch-a) 148.8 c/w note 1: ensure that the channel temperature does not exceed 150c. note 2: (a) device mounted on a glass-epoxy board (a) (b) device mounted on a glass-epoxy board (b) note 3: v dd = 16 v, t ch = 25c (initial), l = 0.2 mh, r g = 25 , i ar = 9.1 a note 4: repetitive rating: pulse width li mited by maximum channel temperature. note 5: on the lower left of the marking indicates pin 1. * weekly code (three digits): week of manufacture (01 for the first week of the year, continuing up to 52 or 53) year of manufacture (the last digit of the year) (b) fr-4 25.4 25.4 0.8t unit: (mm) (a) fr-4 25.4 25.4 0.8t unit: (mm)
TPCP8006 2008-10-22 3 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 12 v, v ds = 0 v ? ? 100 a drain cut-off current i dss v ds = 20 v, v gs = 0 v ? ? 10 a v (br) dss i d = 10 ma, v gs = 0 v 20 ? ? drain-source breakdown voltage v (br) dsx i d = 10 ma, v gs = ?12 v 8 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 0.5 ? 1.2 v v gs = 2.5 v, i d = 4.5 a ? 9.5 13.7 drain-source on-resistance r ds (on) v gs = 4.5 v, i d = 4.5 a ? 6.5 10 m forward transfer admittance |y fs | v ds = 10 v, i d = 4.5 a 18 36 ? s input capacitance c iss ? 1480 ? reverse transfer capacitance c rss ? 330 ? output capacitance c oss v ds = 10 v, v gs = 0 v, f = 1 mhz ? 470 ? pf rise time t r ? 8 ? turn-on time t on ? 16 ? fall time t f ? 19 ? switching time turn-off time t off duty 1%, t w = 10 s ? 53 ? ns total gate charge (gate-source plus gate-drain) q g ? 22 ? gate-source charge 1 q gs1 ? 4 ? gate-drain (?miller?) charge q gd v dd 16 v, v gs = 5 v, i d = 9.1 a ? 7 ? nc source-drain ratings and characteristics (ta = 25c) characteristic symbol test condition min typ. max unit drain reverse current pulse (note 1) i drp ? ? ? 36.4 a forward voltage (diode) v dsf i dr = 9.1 a, v gs = 0 v ? ? ? 1.2 v r l = 2.22 v dd 10 v 0 v v gs 5 v 4.7 i d = 4.5 a v out
TPCP8006 2008-10-22 4 0 0.4 0.6 0.8 1 0 2 4 6 8 10 i d = 9.1 a 2.3 0.2 4.5 1 0.1 1 10 100 10 100 v gs = 2.5 v 4.5 0.1 1 10 100 10 100 1 25c 100c ta = ? 55c 0 4 8 12 16 20 ta = ? 55c 0 0.5 1 1.5 2 3 2.5 25 100 0 0 0.4 0.8 1.2 1.6 4 8 12 16 20 v gs = 1.4 v 1.5 1.6 1.7 1.8 1.9 2 3 2 4 0 0 0.2 0.4 0.6 1 2 4 6 8 10 1.8 0.8 3 1.7 v gs = 1.4 v 1.5 1.6 1.9 4 2 forward transfer admittance |y fs | (s) drain? source voltage v ds (v) i d ? v ds drain current i d (a) drain ? source voltage v ds (v) i d ? v ds drain current i d (a) gate? source voltage v gs (v) i d ? v gs drain current i d (a) drain current i d (a) drain current i d (a) drain? source on-resistance r ds (on) (m ) common source ta = 25c pulse test common source v ds = 10 v pulse test common source ta = 25c pulse test common source v ds = 10 v pulse test |y fs | ? i d r ds (on) ? i d drain? source voltage v ds (v) gate ? source voltage v gs (v) v ds ? v gs common source ta = 25c pulse test common source ta = 25c pulse test
TPCP8006 2008-10-22 5 6 12 18 24 0 3 9 12 v dd = 16 v 4 v 8 v v gs v ds 6 0 0 10 30 40 20 (1) (2) 0.5 1.5 0 40 80 120 160 1 2.0 0 0 ? 80 ? 40 0 40 80 120 160 0.4 0.8 1.2 2 1.6 0.01 0.1 10 100 100 1000 10000 c iss c oss c rss 1 0.1 0 10 100 ? 0.2 ? 0.4 ? 0.6 ? 0.8 ? 1.2 v gs = ? 1 v 1 0 5 3 1 ? 1 0 ? 80 ? 40 0 40 80 120 160 4 8 12 16 4.5 v v gs = 2.5 v i d = 2.3,4.5,9.1 a i d = 2.3,4.5,9.1 a 20 common source v gs = 0 v f = 1 mhz ta = 25c ambient temperature ta ( c) r ds (on) ? ta drain? source on-resistance r ds (on) (m ) drain ? source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) drain? source voltage v ds (v) c ? v ds capacitance c (pf) ambient temperature ta ( c) v th ? ta gate threshold voltage v th (v) ambient temperature ta (c) p d ? ta drain power dissipation p d (w) gate? source voltage v gs (v) dynamic input/output characteristics drain? source voltage v ds (v) common source ta = 25c pulse test common source v ds = 10 v i d = 1ma pulse test common source i d = 9.1 a ta = 25c single pulse test common source pulse test total gate charge q g (nc) (1) device mounted on a glass-epoxy board (a)(note 2a) (2) device mounted on a glass-epoxy board (b) (note 2b) t = 5 s
TPCP8006 2008-10-22 6 0.1 1 10 100 0 .1 1 1 0 1 00 t = 10 ms * 1 ms * v dss max 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 (1) (2) safe operating area drain? source voltage v ds (v) drain current i d (a) * : single nonrepetitive pulse ta = 25c curves must be derated linearly with increase in temperature. r th(j? c) ? t w pulse width t w (s) transient thermal impedance r th (c/w) (1) device mounted on a glass-epoxy board (a) (note 2a) (2) device mounted on a glass-epoxy board (b) (note 2b) single pulse i d max (pulsed) *
TPCP8006 2008-10-22 7 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before creating and producing des igns and using, customers mus t also refer to and comply with (a) the latest versions of all re levant toshiba information, including without limitation, this d ocument, the specifications, the data sheets and applic ation notes for product and the precautions and conditions set forth in the ?tosh iba semiconductor reliability handbook? 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